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FDMS86580-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDMS86580-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDMS86580-F085 N-Channel PowerTrench® M OSFET
FDMS86580-F085
N-Channel PowerTr ench® MOSFET
60 V, 50 A, 9. 6 mΩ Feat ures Typical RDS(on) = 7. 9 mΩ at VG S = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS C apability RoHS Compliant Qualifie d to AEC Q101 Top Pin 1 Applications Automotive Engine Control PowerT rain Management Solenoid and Motor D rivers Electronic Steering Integr ated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum R atings TJ = 25°C unless otherwise note d. Bottom Pin 1 SSSG Power D . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDMS86580-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDMS86580-F085 N-Channel PowerTrench® M OSFET
FDMS86580-F085
N-Channel PowerTr ench® MOSFET
60 V, 50 A, 9. 6 mΩ Feat ures Typical RDS(on) = 7. 9 mΩ at VG S = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS C apability RoHS Compliant Qualifie d to AEC Q101 Top Pin 1 Applications Automotive Engine Control PowerT rain Management Solenoid and Motor D rivers Electronic Steering Integr ated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum R atings TJ = 25°C unless otherwise note d. Bottom Pin 1 SSSG Power D . |
| Manufacture | ON Semiconductor |
| Datasheet |
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