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FDMS2D4N03S Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDMS2D4N03S |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDMS2D4N03S N-Channel PowerTrench® MOSF ET
www. onsemi. com FDMS2D4N03S N-Chan nel PowerTrench® SyncFETTM 30 V, 163 A , 1. 8 mΩ Features General Descriptio n Max rDS(on) = 1. 8 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2. 34 mΩ at VGS = 4. 5 V, ID = 26 A High Perf ormance Technology for Extremely Low rD S(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS Compliant T he FDMS2D4N03S has been designed to min imize losses in power conversion applic ation. Advancements in both silicon and package technologies have been combine d to offer the lowest rDS(on) while mai ntaining excellent switch . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDMS2D4N03S |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDMS2D4N03S N-Channel PowerTrench® MOSF ET
www. onsemi. com FDMS2D4N03S N-Chan nel PowerTrench® SyncFETTM 30 V, 163 A , 1. 8 mΩ Features General Descriptio n Max rDS(on) = 1. 8 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2. 34 mΩ at VGS = 4. 5 V, ID = 26 A High Perf ormance Technology for Extremely Low rD S(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS Compliant T he FDMS2D4N03S has been designed to min imize losses in power conversion applic ation. Advancements in both silicon and package technologies have been combine d to offer the lowest rDS(on) while mai ntaining excellent switch . |
| Manufacture | ON Semiconductor |
| Datasheet |
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