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FDWS9511L-F085 Datasheet, Equivalent, Power MOSFET.P-Channel Power MOSFET P-Channel Power MOSFET |
　
　
　
| Part | FDWS9511L-F085 |
|---|---|
| Description | P-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET – Po wer, Single P-Chanel -40 V, -30 A, 20. 5 mW FDWS9511L-F085 Features • Small Footprint (5x6 mm) for Compact Design â €¢ Low RDS(on) to Minimize Conduction L osses • Low QG and Capacitance to Min imize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capab le • These Devices are Pb−Free, Hal ogen Free/BFR Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS −40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent R . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDWS9511L-F085 |
|---|---|
| Description | P-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET – Po wer, Single P-Chanel -40 V, -30 A, 20. 5 mW FDWS9511L-F085 Features • Small Footprint (5x6 mm) for Compact Design â €¢ Low RDS(on) to Minimize Conduction L osses • Low QG and Capacitance to Min imize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capab le • These Devices are Pb−Free, Hal ogen Free/BFR Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS −40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent R . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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