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FDD86069-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDD86069-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
100 V, 10. 5 mW, 51 A FDD86069-F085 Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Mi nimize Driver Losses • Wettable Flank for Enhanced Optical Inspection • AE C−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen F ree/BFR−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless othe rwise noted) Parameter Symbol Value U nit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VG S ±20 V Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 1 00 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD86069-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
100 V, 10. 5 mW, 51 A FDD86069-F085 Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Mi nimize Driver Losses • Wettable Flank for Enhanced Optical Inspection • AE C−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen F ree/BFR−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless othe rwise noted) Parameter Symbol Value U nit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VG S ±20 V Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 1 00 . |
| Manufacture | ON Semiconductor |
| Datasheet |
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