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FDB8870-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDB8870-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB8870-F085 N-Channel PowerTrench® MOS FET
FDB8870-F085
N-Channel PowerTrench ® MOSFET 30V, 160A, 3. 9mΩ General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS (ON) and fast switching speed. Applicat ions • DC/DC converters Features • rDS(ON) = 3. 9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4. 4mΩ, VGS = 4. 5V, ID = 35A • High performance trench technol ogy for extremely low rDS(ON) • Low g ate charge • High power and c . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDB8870-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB8870-F085 N-Channel PowerTrench® MOS FET
FDB8870-F085
N-Channel PowerTrench ® MOSFET 30V, 160A, 3. 9mΩ General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS (ON) and fast switching speed. Applicat ions • DC/DC converters Features • rDS(ON) = 3. 9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4. 4mΩ, VGS = 4. 5V, ID = 35A • High performance trench technol ogy for extremely low rDS(ON) • Low g ate charge • High power and c . |
| Manufacture | ON Semiconductor |
| Datasheet |
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