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NVMFD027N10MCL Datasheet, Equivalent, Power MOSFET.Dual N-Channel Power MOSFET Dual N-Channel Power MOSFET |
　
　
　
| Part | NVMFD027N10MCL |
|---|---|
| Description | Dual N-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET - Powe r, Dual N-Channel 100 V, 26 mW, 28 A NV MFD027N10MCL Features • Small Footpr int (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD027N10MCL ∠’ Wettable Flank Products • These Dev ices are Pb−Free, Halogen Free/BFR Fr ee, Beryllium Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25° . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFD027N10MCL |
|---|---|
| Description | Dual N-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET - Powe r, Dual N-Channel 100 V, 26 mW, 28 A NV MFD027N10MCL Features • Small Footpr int (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD027N10MCL ∠’ Wettable Flank Products • These Dev ices are Pb−Free, Halogen Free/BFR Fr ee, Beryllium Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25° . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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