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NVMFS5831NL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NVMFS5831NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 2. 95 mW, 161 A NVMFS5831NL Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS583 1NLWF − Wettable Flanks Product • A EC−Q101 Qualified and PPAP Capable †¢ These Devices are Pb−Free and are R oHS Compliant MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Sour ce Voltage VGS ± 20 V Continuous Dr ain Cur- Tmb = 25°C ID rent RYJ−m b (Notes 1, 2, 3, 4) Steady Tmb = 100 °C Pow . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFS5831NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 2. 95 mW, 161 A NVMFS5831NL Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS583 1NLWF − Wettable Flanks Product • A EC−Q101 Qualified and PPAP Capable †¢ These Devices are Pb−Free and are R oHS Compliant MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Sour ce Voltage VGS ± 20 V Continuous Dr ain Cur- Tmb = 25°C ID rent RYJ−m b (Notes 1, 2, 3, 4) Steady Tmb = 100 °C Pow . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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