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NVMYS013N08LH Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NVMYS013N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 3. 1 mW, 42 A NVMYS013N08LH Features â €¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q 101 Qualified and PPAP Capable • Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 80 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 3) Steady TC = 25 °C ID State TC = 100°C 42 A 29 Po . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMYS013N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 3. 1 mW, 42 A NVMYS013N08LH Features â €¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q 101 Qualified and PPAP Capable • Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 80 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 3) Steady TC = 25 °C ID State TC = 100°C 42 A 29 Po . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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