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NVMYS013N08LH Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVMYS013N08LH
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 1 3.
1 mW, 42 A NVMYS013N08LH Features Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Con duction Losses
• Low QG and Capacitan ce to Minimize Driver Losses
• LFPAK4 Package, Industry Standard
• AEC−Q 101 Qualified and PPAP Capable
• Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 80 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 3) Steady TC = 25 °C ID State TC = 100°C 42 A 29 Po .
Manufacture ON Semiconductor
Datasheet
Download NVMYS013N08LH Datasheet
Part NVMYS013N08LH
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 1 3.
1 mW, 42 A NVMYS013N08LH Features Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Con duction Losses
• Low QG and Capacitan ce to Minimize Driver Losses
• LFPAK4 Package, Industry Standard
• AEC−Q 101 Qualified and PPAP Capable
• Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 80 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 3) Steady TC = 25 °C ID State TC = 100°C 42 A 29 Po .
Manufacture ON Semiconductor
Datasheet
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NVMYS013N08LH

NVMYS013N08LH
NVMYS013N08LH

NVMYS013N08LH

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