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NVHL025N065SC1

ON Semiconductor

SiC MOSFET

Description
MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 164 nC) Low Capacitance (Coss = 278 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant Typical Appl...


ON Semiconductor

NVHL025N065SC1

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