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NTTFS6H854N Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NTTFS6H854N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 4. 5 mW, 48 A NTTFS6H854N Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 2 5°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipati on State TC = 25°C PD RqJC (Notes 1 , 2, 3) TC = 100°C 44 A 31 68 W . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTTFS6H854N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 4. 5 mW, 48 A NTTFS6H854N Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 2 5°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipati on State TC = 25°C PD RqJC (Notes 1 , 2, 3) TC = 100°C 44 A 31 68 W . |
| Manufacture | ON Semiconductor |
| Datasheet |
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