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NTTFS6H854N Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NTTFS6H854N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 1 4.
5 mW, 48 A NTTFS6H854N Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 2 5°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipati on State TC = 25°C PD RqJC (Notes 1 , 2, 3) TC = 100°C 44 A 31 68 W .
Manufacture ON Semiconductor
Datasheet
Download NTTFS6H854N Datasheet
Part NTTFS6H854N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 1 4.
5 mW, 48 A NTTFS6H854N Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 2 5°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipati on State TC = 25°C PD RqJC (Notes 1 , 2, 3) TC = 100°C 44 A 31 68 W .
Manufacture ON Semiconductor
Datasheet
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NTTFS6H854N

NTTFS6H854N
NTTFS6H854N

NTTFS6H854N

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