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NTMYS008N08LH Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NTMYS008N08LH
Description N-Channel Power MOSFET
Feature MOSFET- Power, Single N-Channel 80 V, 8.
8 mW, 59 A NTMYS008N08LH Features
• Small Footprint (5x6 mm) for Compact D esign
• Low RDS(on) to Minimize Condu ction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 P ackage, Industry Standard
• These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 59 A 42 Powe r Dissipation RqJC (Note 1) TC = 25°C .
Manufacture ON Semiconductor
Datasheet
Download NTMYS008N08LH Datasheet
Part NTMYS008N08LH
Description N-Channel Power MOSFET
Feature MOSFET- Power, Single N-Channel 80 V, 8.
8 mW, 59 A NTMYS008N08LH Features
• Small Footprint (5x6 mm) for Compact D esign
• Low RDS(on) to Minimize Condu ction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 P ackage, Industry Standard
• These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 59 A 42 Powe r Dissipation RqJC (Note 1) TC = 25°C .
Manufacture ON Semiconductor
Datasheet
Download NTMYS008N08LH Datasheet

NTMYS008N08LH

NTMYS008N08LH
NTMYS008N08LH

NTMYS008N08LH

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