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NTMYS008N08LH Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NTMYS008N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET- Power, Single N-Channel
80 V, 8. 8 mW, 59 A NTMYS008N08LH Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 P ackage, Industry Standard • These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 59 A 42 Powe r Dissipation RqJC (Note 1) TC = 25°C . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTMYS008N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET- Power, Single N-Channel
80 V, 8. 8 mW, 59 A NTMYS008N08LH Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 P ackage, Industry Standard • These Dev ices are Pb−Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 59 A 42 Powe r Dissipation RqJC (Note 1) TC = 25°C . |
| Manufacture | ON Semiconductor |
| Datasheet |
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