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SCTHS250N65G3

STMicroelectronics
Part Number SCTHS250N65G3
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 ...
Datasheet PDF File SCTHS250N65G3 PDF File

SCTHS250N65G3
SCTHS250N65G3

Overview
SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.
7 mΩ typ.
, 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order codes VDS RDS(on) typ.
ID 23 SCTHS250N65G3AG 650 V 6.
7 mΩ 237 A SCTHS250N65G3TAG 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Application • Main inverter (electric traction) NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been devel...


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