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SCT025H120G3AG

STMicroelectronics
Part Number SCT025H120G3AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCT025H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package T...
Datasheet PDF File SCT025H120G3AG PDF File

SCT025H120G3AG
SCT025H120G3AG

Overview
SCT025H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ.
, 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT025H120G3AG VDS 1200 V RDS(on) typ.
27 mΩ ID 55 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced ...


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