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TSB582 Datasheet, Equivalent, operational amplifier.BiCMOS dual operational amplifier BiCMOS dual operational amplifier |
　
　
　
| Part | TSB582 |
|---|---|
| Description | BiCMOS dual operational amplifier |
| Feature | TSB582
Datasheet
200 mA output current w ith thermal shutdown and output current limiter, 3. 1 MHz, 36 V, BiCMOS dual op erational amplifier SO8 Exposed Pad DF N8 (3 x 3 mm) Exposed Pad, Wettable Fla nk Maturity status link TSB582 Feature s • Wide supply voltage: 4 V - 36 V â €¢ High output current 200 mA • Rail- to-rail output, low rail input • Gain bandwidth product: 3. 1 MHz • High sl ew rate: 2 V/µs • Internal thermal s hutdown & output current limiter • En hanced RF noise immunity • High toler ance to ESD: 4 kV HBM • Extended temp erature range: -40 °C to 125 °C • A utomotive grade • Low noise 45 nV/√ Hz . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | TSB582 |
|---|---|
| Description | BiCMOS dual operational amplifier |
| Feature | TSB582
Datasheet
200 mA output current w ith thermal shutdown and output current limiter, 3. 1 MHz, 36 V, BiCMOS dual op erational amplifier SO8 Exposed Pad DF N8 (3 x 3 mm) Exposed Pad, Wettable Fla nk Maturity status link TSB582 Feature s • Wide supply voltage: 4 V - 36 V â €¢ High output current 200 mA • Rail- to-rail output, low rail input • Gain bandwidth product: 3. 1 MHz • High sl ew rate: 2 V/µs • Internal thermal s hutdown & output current limiter • En hanced RF noise immunity • High toler ance to ESD: 4 kV HBM • Extended temp erature range: -40 °C to 125 °C • A utomotive grade • Low noise 45 nV/√ Hz . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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