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TSB582 Datasheet, Equivalent, operational amplifier.

BiCMOS dual operational amplifier

BiCMOS dual operational amplifier

 

 

 

Part TSB582
Description BiCMOS dual operational amplifier
Feature TSB582 Datasheet 200 mA output current w ith thermal shutdown and output current limiter, 3.
1 MHz, 36 V, BiCMOS dual op erational amplifier SO8 Exposed Pad DF N8 (3 x 3 mm) Exposed Pad, Wettable Fla nk Maturity status link TSB582 Feature s
• Wide supply voltage: 4 V - 36 V High output current 200 mA
• Rail- to-rail output, low rail input
• Gain bandwidth product: 3.
1 MHz
• High sl ew rate: 2 V/µs
• Internal thermal s hutdown & output current limiter
• En hanced RF noise immunity
• High toler ance to ESD: 4 kV HBM
• Extended temp erature range: -40 °C to 125 °C
• A utomotive grade
• Low noise 45 nV/√ Hz .
Manufacture STMicroelectronics
Datasheet
Download TSB582 Datasheet
Part TSB582
Description BiCMOS dual operational amplifier
Feature TSB582 Datasheet 200 mA output current w ith thermal shutdown and output current limiter, 3.
1 MHz, 36 V, BiCMOS dual op erational amplifier SO8 Exposed Pad DF N8 (3 x 3 mm) Exposed Pad, Wettable Fla nk Maturity status link TSB582 Feature s
• Wide supply voltage: 4 V - 36 V High output current 200 mA
• Rail- to-rail output, low rail input
• Gain bandwidth product: 3.
1 MHz
• High sl ew rate: 2 V/µs
• Internal thermal s hutdown & output current limiter
• En hanced RF noise immunity
• High toler ance to ESD: 4 kV HBM
• Extended temp erature range: -40 °C to 125 °C
• A utomotive grade
• Low noise 45 nV/√ Hz .
Manufacture STMicroelectronics
Datasheet
Download TSB582 Datasheet

TSB582

TSB582
TSB582

TSB582

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