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STG15M120F3D7 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part STG15M120F3D7
Description IGBT
Feature STG15M120F3D7 Datasheet Trench gate fiel d-stop 1200 V, 15 A low-loss M series I GBT die in D7 packing C G Features 10 µs of short-circuit withstanding time
• Low VCE(sat) = 1.
85 V (typ.
) @ IC = 15 A
• Positive VCE(sat) temper ature coefficient
• Tight parameter d istribution
• Maximum junction temper ature: TJ = 175 °C Applications E Industrial motor control EGCD
• Industrial drives
• Solar inverters
• Uninterruptable power supplies (UP S)
• PFC converters Description Thi s device is an IGBT developed using an advanced proprietary trench gate fields top structure.
The device is part of .
Manufacture STMicroelectronics
Datasheet
Download STG15M120F3D7 Datasheet
Part STG15M120F3D7
Description IGBT
Feature STG15M120F3D7 Datasheet Trench gate fiel d-stop 1200 V, 15 A low-loss M series I GBT die in D7 packing C G Features 10 µs of short-circuit withstanding time
• Low VCE(sat) = 1.
85 V (typ.
) @ IC = 15 A
• Positive VCE(sat) temper ature coefficient
• Tight parameter d istribution
• Maximum junction temper ature: TJ = 175 °C Applications E Industrial motor control EGCD
• Industrial drives
• Solar inverters
• Uninterruptable power supplies (UP S)
• PFC converters Description Thi s device is an IGBT developed using an advanced proprietary trench gate fields top structure.
The device is part of .
Manufacture STMicroelectronics
Datasheet
Download STG15M120F3D7 Datasheet

STG15M120F3D7

STG15M120F3D7
STG15M120F3D7

STG15M120F3D7

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