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STG15M120F3D7 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | STG15M120F3D7 |
|---|---|
| Description | IGBT |
| Feature | STG15M120F3D7
Datasheet
Trench gate fiel d-stop 1200 V, 15 A low-loss M series I GBT die in D7 packing
C G
Features
†¢ 10 µs of short-circuit withstanding time • Low VCE(sat) = 1. 85 V (typ. ) @ IC = 15 A • Positive VCE(sat) temper ature coefficient • Tight parameter d istribution • Maximum junction temper ature: TJ = 175 °C Applications E â €¢ Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UP S) • PFC converters Description Thi s device is an IGBT developed using an advanced proprietary trench gate fields top structure. The device is part of . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | STG15M120F3D7 |
|---|---|
| Description | IGBT |
| Feature | STG15M120F3D7
Datasheet
Trench gate fiel d-stop 1200 V, 15 A low-loss M series I GBT die in D7 packing
C G
Features
†¢ 10 µs of short-circuit withstanding time • Low VCE(sat) = 1. 85 V (typ. ) @ IC = 15 A • Positive VCE(sat) temper ature coefficient • Tight parameter d istribution • Maximum junction temper ature: TJ = 175 °C Applications E â €¢ Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UP S) • PFC converters Description Thi s device is an IGBT developed using an advanced proprietary trench gate fields top structure. The device is part of . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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