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RF2L42008CG2

STMicroelectronics
Part Number RF2L42008CG2
Manufacturer STMicroelectronics
Description RF power LDMOS transistor
Published Mar 14, 2023
Detailed Description RF2L42008CG2 Datasheet 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1...
Datasheet PDF File RF2L42008CG2 PDF File

RF2L42008CG2
RF2L42008CG2

Overview
RF2L42008CG2 Datasheet 8 W, 28 V, 0.
7 to 4.
2 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.
5 dB 47% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • Telecom and wideband communications • Avionics and radar • 2.
45 GHz industrial Description The RF2L42008CG2 is a 8...


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