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STPSC40H12C-Y Datasheet, Equivalent, carbide diode.

power Schottky silicon carbide diode

power Schottky silicon carbide diode

 

 

 

Part STPSC40H12C-Y
Description power Schottky silicon carbide diode
Feature STPSC40H12C-Y Datasheet 40 A 1200 V powe r Schottky silicon carbide diode Produ ct status link STPSC40H12C-Y Product s ummary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.
) 175 °C VF (typ.
) 1.
35 V Product label Features
• AEC-Q101 q ualified
• No or negligible reverse r ecovery
• Switching behavior independ ent of temperature
• Robust high-volt age periphery
• PPAP capable
• Oper ating Tj from -40 °C to 175 °C
• EC OPACK2 compliant Applications
• OBC ( On Board Battery chargers)
• PHEV - E V charging stations
• Resonant LLC to pology
• PFC functions (Power Factor Corrector) Description The SiC diode, a .
Manufacture STMicroelectronics
Datasheet
Download STPSC40H12C-Y Datasheet
Part STPSC40H12C-Y
Description power Schottky silicon carbide diode
Feature STPSC40H12C-Y Datasheet 40 A 1200 V powe r Schottky silicon carbide diode Produ ct status link STPSC40H12C-Y Product s ummary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.
) 175 °C VF (typ.
) 1.
35 V Product label Features
• AEC-Q101 q ualified
• No or negligible reverse r ecovery
• Switching behavior independ ent of temperature
• Robust high-volt age periphery
• PPAP capable
• Oper ating Tj from -40 °C to 175 °C
• EC OPACK2 compliant Applications
• OBC ( On Board Battery chargers)
• PHEV - E V charging stations
• Resonant LLC to pology
• PFC functions (Power Factor Corrector) Description The SiC diode, a .
Manufacture STMicroelectronics
Datasheet
Download STPSC40H12C-Y Datasheet

STPSC40H12C-Y

STPSC40H12C-Y
STPSC40H12C-Y

STPSC40H12C-Y

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