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STPSC40H12C-Y Datasheet, Equivalent, carbide diode.power Schottky silicon carbide diode power Schottky silicon carbide diode |
Part | STPSC40H12C-Y |
---|---|
Description | power Schottky silicon carbide diode |
Feature | STPSC40H12C-Y
Datasheet
40 A 1200 V powe r Schottky silicon carbide diode
Produ ct status link STPSC40H12C-Y
Product s ummary
IF(AV)
2 x 20 A
VRRM
1200 V
Tj (max. ) 175 °C VF (typ. ) 1. 35 V Product label Features • AEC-Q101 q ualified • No or negligible reverse r ecovery • Switching behavior independ ent of temperature • Robust high-volt age periphery • PPAP capable • Oper ating Tj from -40 °C to 175 °C • EC OPACK2 compliant Applications • OBC ( On Board Battery chargers) • PHEV - E V charging stations • Resonant LLC to pology • PFC functions (Power Factor Corrector) Description The SiC diode, a . |
Manufacture | STMicroelectronics |
Datasheet |
Part | STPSC40H12C-Y |
---|---|
Description | power Schottky silicon carbide diode |
Feature | STPSC40H12C-Y
Datasheet
40 A 1200 V powe r Schottky silicon carbide diode
Produ ct status link STPSC40H12C-Y
Product s ummary
IF(AV)
2 x 20 A
VRRM
1200 V
Tj (max. ) 175 °C VF (typ. ) 1. 35 V Product label Features • AEC-Q101 q ualified • No or negligible reverse r ecovery • Switching behavior independ ent of temperature • Robust high-volt age periphery • PPAP capable • Oper ating Tj from -40 °C to 175 °C • EC OPACK2 compliant Applications • OBC ( On Board Battery chargers) • PHEV - E V charging stations • Resonant LLC to pology • PFC functions (Power Factor Corrector) Description The SiC diode, a . |
Manufacture | STMicroelectronics |
Datasheet |
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