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RF2L36075CF2

STMicroelectronics
Part Number RF2L36075CF2
Manufacturer STMicroelectronics
Description RF power LDMOS transistor
Published Mar 14, 2023
Detailed Description RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection ...
Datasheet PDF File RF2L36075CF2 PDF File

RF2L36075CF2
RF2L36075CF2

Overview
RF2L36075CF2 Datasheet 75 W, 28 V, 3.
1 to 3.
6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom side) 3 Drain Features Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.
5 dB 45% • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Applications • Telecom • S-Band radar Description The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed...


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