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RF2L16180CB4

STMicroelectronics
Part Number RF2L16180CB4
Manufacturer STMicroelectronics
Description RF power LDMOS transistor
Published Mar 14, 2023
Detailed Description RF2L16180CB4 Datasheet 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connec...
Datasheet PDF File RF2L16180CB4 PDF File

RF2L16180CB4
RF2L16180CB4

Overview
RF2L16180CB4 Datasheet 180 W, 28 V, 1.
3 to 1.
6 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Optimized for Doherty applications • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Applications • Multicarrier base station • Industrial, scientific and medical Description The RF2L16180CB4 ...


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