D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design
Significantly Reduces Power Dissipation
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
D Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
D High-Drive Outputs (–32-mA...
