D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design
Significantly Reduces Power Dissipation
D Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
D High-Impedance State During Power Up
and Power Down
D High-Drive Outputs (–32-mA IOH, 64-mA IOL) D Latch-Up Performance Exceeds 500 mA Per
JESD 17
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015...
