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C3M0040120K

Cree
Part Number C3M0040120K
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Jun 25, 2023
Detailed Description VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Chan...
Datasheet PDF File C3M0040120K PDF File

C3M0040120K
C3M0040120K


Overview
VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin Tab • 8mm of creepage distance between drain and source Drain • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applicati...



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