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STB51N60DM6

STMicroelectronics
Part Number STB51N60DM6
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 4, 2024
Detailed Description Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ., 36 A, MDmesh DM6 Power MOSFET in a D²PAK packa...
Datasheet PDF File STB51N60DM6 PDF File

STB51N60DM6
STB51N60DM6

Overview
Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ.
, 36 A, MDmesh DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS RDS(on) max.
ID STB51N60DM6 600 V 80 mΩ 36 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications G(1) • Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qr...


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