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AM28F010

Advanced Micro Devices
Part Number AM28F010
Manufacturer Advanced Micro Devices
Description 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
Published Mar 24, 2005
Detailed Description FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High per...
Datasheet PDF File AM28F010 PDF File

AM28F010
AM28F010

Overview
FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.
0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.
0 V ±5% s Latch-up protected to 100 mA from –1 V to V CC +1 V s Flasherase™ Electrical Bulk Chip-Erase — One second typical chip-erase s Flashrite™ Programming — 10 µs typical byte-program — Two seconds typical chip program s Command registe...


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