Lamp Driver. HV830 Datasheet

HV830 Driver. Datasheet pdf. Equivalent

Part HV830
Description High Voltage EL Lamp Driver
Feature Supertex inc. HV830 High Voltage EL Lamp Driver IC Features ►► Processed with HVCMOS® technology .
Manufacture Supertex Inc
Datasheet
Download HV830 Datasheet




HV830
Supertex inc.
HV830
High Voltage EL Lamp Driver IC
Features
Processed with HVCMOS® technology
2.0 to 9.5V operating supply voltage
DC to AC conversion
200V peak-to-peak typical output voltage
Large output load capability typically 50nF
Permits the use of high-resistance elastomeric lamp
components
Adjustable output lamp frequency to control lamp
color, lamp life, and power consumption
Adjustable converter frequency to eliminate harmon-
ics and optimize power consumption
Enable/disable function
Low current draw under no load condition
Very low standby current - 30nA typical
Applications
Handheld personal computers
Electronic personal organizers
GPS units
Pagers
Cellular phones
Portable instrumentation
General Description
The Supertex HV830 is a high-voltage driver designed for
driving EL lamps of up to 50nF. EL lamps greater than 50nF
can be driven for applications not requiring high brightness.
The input supply voltage range is from 2.0 to 9.5V. The device
uses a single inductor and a minimum number of passive
components. The nominal regulated output voltage that is
applied to the EL lamp is ±100V. The chip can be enabled
by connecting the resistors on the RSW-Osc and REL-Osc
pins to the VDD pin, and disabled when connected to GND.
The HV830 has two internal oscillators, a switching MOSFET
and a high-voltage EL lamp driver. The frequency of the
switching converter MOSFET is set by an external resistor
connected between the RSW-Osc and the VDD pins. The EL
lamp driver frequency is set by an external resistor connected
between the REL-Osc and the VDD pins. An external induc-
tor is connected between the LX and VDD pins. A 0.01µF to
0.1µF capacitor is connected between the CS pin and the
GND. The EL lamp is connected between the VA and VB pins.
The switching MOSFET charges the external inductor and
discharges it into the CS capacitor. The voltage at CS will
start to increase. Once the voltage at CS reaches a nominal
value of 100V, the switching MOSFET is turned OFF to con-
serve power. The output pins VA and VB are configured as
an H-bridge and are switched in opposite states to achieve
200V peak-to-peak across the EL lamp.
Block Diagram
VDD
RSW-Osc
GND
Switch
Osc
+
Disable C_ VREF
REL-Osc
Q
Q
Output
Osc
Q
Q
LX
CS
VA
VB
Doc. # DSFP-HV830
E072913
Supertex inc.
www.supertex.com



HV830
HV830
Ordering Information
Part Number
Package
HV830LG-G
8-Lead SOIC
-G denotes a lead (Pb)-free / RoHS compliant package
Packing
2500/Reel
Absolute Maximum Ratings
Parameter
Value
Supply voltage, VDD
Output voltage, VCS
Power dissipation
-0.5 to +10V
-0.5 to +120V
400mW
Storage temperature
-65OC to +150OC
Operating temperature
-25OC to +85OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Pin Configuration
VDD 1
RSW-Osc 2
CS 3
8 REL-Osc
7 VA
6 VB
LX 4
5 GND
8-Lead SOIC
(top view)
Product Marking
YWW
HV830
LLLL
Y = Last Digit of Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC
Typical Thermal Resistance
Package
θja
8-Lead SOIC
101OC/W
Recommended Operating Conditions
Sym
VDD
fEL
TA
Parameter
Supply voltage
VA-B output drive frequency
Operating temperature
Min Typ Max Unit Conditions
2.0 - 9.5 V ---
- - 1.5 KHz ---
-25 - +85 OC ---
DC Electrical Characteristics (VIN = 3.0V, RSW = 1.0MΩ, REL = 3.3MΩ, TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max Unit Conditions
RDS(ON) On resistance of switching transistor - 2.0 4.0 Ω I = 100mA
VCS Output voltage - regulation
90 100 110
V VDD = 2.0V to 9.5V
VA - VB Output peak-to-peak voltage
180 200
220
V VDD = 2.0V to 9.5V
IDDQ Quiescent VDD current - disabled
- 30 - nA RSW-Osc = Low
IDD VDD supply current
- 100 150 µA VDD = 3.0V. See Fig.1
IIN Input current including inductor current - 35 40 mA VDD = 3.0V. See Fig.1
VCS Output voltage on VCS
- 95
-
V VDD = 3.0V. See Fig.1
fEL VA - VB output drive frequency
220 250
280
Hz VDD = 3.0V. See Fig.1
fSW Inductor switching frequency
55 65
75 KHz VDD = 3.0V. See Fig.1
D Switching transistor duty cycle
- 88
-
% ---
Doc. # DSFP-HV830
E072913
Supertex inc.
2 www.supertex.com







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