Frequency Attenuator. HVM187S Datasheet

HVM187S Attenuator. Datasheet pdf. Equivalent

Part HVM187S
Description Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Feature HVM187S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-055C (Z) Rev. 3 Ju.
Manufacture Hitachi Semiconductor
Datasheet
Download HVM187S Datasheet




HVM187S
HVM187S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-055C (Z)
Rev. 3
Jun. 1993
Features
Low forward resistance. (rf = 5.5 max)
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVM187S
Laser Mark
H3
Package Code
MPAK
Pin Arrangement
3
21
(Top View)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2



HVM187S
HVM187S
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Note: Per one device
Symbol
VR
IF
Pd*
Tj
Tstg
Value
60
50
100
125
–55 to +125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Forward resistance
ESD-Capability
VF
IR
C
rf
——
——
——
3.5 —
200 —
1.0 V
100 nA
2.4 pF
5.5
—V
IF = 10mA
VR = 60V
VR = 0V, f = 1MHz
IF = 10mA, f = 100MHz
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; IR 100nA at VR = 60V
10 –2
10–4
10–6
10–8
10–10
10–12
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
2







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