Analog Switch. HS-390RH-T Datasheet
Radiation HardenedCMOS Dual SPDT Analog Switch
Intersil’s Satellite Applications FlowTM (SAF) devices are
fully tested and guaranteed to 100kRAD total dose. This
QML Class T device is processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The HS-390RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). These switches offer low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30 pre-rad and 35
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-390RH-T are
contained in SMD 5962-95813. A “hot-link” is provided from
our website for downloading.
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
-55 to 125
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose () 1 x 105 RAD(Si)
- No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-390 Series Analog
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . 60 (Max, Post Rad)
• Low Operating Power. . . . . . . . . . 100A (Max, Post Rad)
HS1-390RH (SBDIP), CDIP2-T16
HS9-390RH (FLATPACK), CDFP4-F16
IN N P
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(2130m x 1930m x 279m 25.4m)
84 x 76 x 11mils 1mil
Thickness: 12.5kÅ 2kÅ
Metallization Mask Layout
Type: Silox (SiO2)
Thickness: 8.0kÅ 1.0kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
Metal Gate CMOS, Dielectric Isolation
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
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For information regarding Intersil Corporation and its products, see www.intersil.com
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