Output PWM. HS9-1825ARH-Q Datasheet

HS9-1825ARH-Q PWM. Datasheet pdf. Equivalent

Part HS9-1825ARH-Q
Description Radiation Hardened High-Speed/ Dual Output PWM
Feature HS-1825ARH Data Sheet January 2000 File Number 4561.4 Radiation Hardened High-Speed, Dual Output PW.
Manufacture Intersil Corporation
Datasheet
Download HS9-1825ARH-Q Datasheet




HS9-1825ARH-Q
Data Sheet
HS-1825ARH
January 2000 File Number 4561.4
Radiation Hardened High-Speed, Dual
Output PWM
The Radiation Hardened HS-1825ARH Pulse Width
Modulator is designed to be used in high frequency
switched-mode power supplies and can be used in either
current-mode or voltage-mode. It is well suited for single-
ended boost converter applications.
Device features include a precision voltage reference, low
power start-up circuit, high frequency oscillator, wide-band
error amplifier, and fast current-limit comparator. The use of
proprietary process capabilities and unique design
techniques results in fast propagation delay times and high
output current over a wide range of output voltages.
Constructed with the Intersil Rad Hard Silicon Gate (RSG)
Dielectric Isolation BiCMOS process, the HS-1825ARH has
been specifically designed to provide highly reliable
performance when exposed to harsh radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-1825ARH
are contained in SMD 5962-99558. That document may
be easily downloaded from our website.
www.intersil.com/spacedefense/space.asp
Ordering Information
ORDERING
NUMBER
INTERSIL MKT.
NUMBER
5962F9955801VEC HS1-1825ARH-Q
5962F9955801QEC HS1-1825ARH-8
5962F9955801VXC HS9-1825ARH-Q
5962F9955801QXC HS9-1825ARH-8
HS1-1825ARH/Proto HS1-1825ARH/Proto
HS9-1825ARH/Proto HS9-1825ARH/Proto
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Features
• Electrically Screened to DESC SMD # 5962-99558
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Maximum Total Dose . . . . . . . . . . . . . 3 x 105 RAD(SI)
- Vertical Architecture Provides Low Dose Rate Immunity
- DI RSG Process Provides Latch-Up Immunity
• Low Start-Up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ)
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . 80ns (Typ)
• 12V to 20V Operation
• 1A (Peak) Dual Output Drive Capability
• 5.1V Reference
• Under-Voltage Lockout
• Programmable Soft-Start
• Switching Frequencies to 500kHz
• Trimmed Oscillator Discharge Current
• Latched Overcurrent Comparator with Full Cycle Restart
• Programmable Leading Edge Blanking Circuit
Applications
• Current or Voltage Mode Switching Power Supplies
• Motor Speed and Direction Control
Pinout
HS-1825ARH
SBDIP (CDIP2-T16) AND FLATPACK (CDFP4-F16)
TOP VIEW
INV 1
NON-INV 2
E/A OUT 3
CLOCK 4
RT 5
CT 6
RAMP 7
SOFT START 8
16 VREF 5.1V
15 VCC
14 OUTPUT B
13 VC
12 POWER GND
11 OUTPUT A
10 GND
9 ILIM/SD
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000



HS9-1825ARH-Q
Die Characteristics
DIE DIMENSIONS:
4710µm x 3570µm (185 mils x 140 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization:
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
HS-1825ARH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
225
HS-1825ARH
RT (5)
CT (6)
RAMP (7)
SS (8)
ILIM (9)
OSCGND
(NOTE 1)
GND (10)
OUTA (11)
PGND (12)
(NOTE 2)
VC (13)
(NOTE 2)
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be connected to GND.
2. PGND and VC each require two bond pad connections.
(4) CLK/LEB
(3) EAOUT
(2) IN+
(1) IN-
(16) VREF
(15) VCC
(14) OUTB
(12) PGND
(NOTE 2)
(13) VC
(NOTE 2)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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