Speed Switching. HSB0104YP Datasheet

HSB0104YP Switching. Datasheet pdf. Equivalent

Part HSB0104YP
Description Silicon Schottky Barrier Diode for High Speed Switching
Feature HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730(Z) Rev 0 Dec. 1998 Fe.
Manufacture Hitachi Semiconductor
Datasheet
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HSB0104YP
HSB0104YP
Silicon Schottky Barrier Diode
for High Speed Switching
ADE-208-730(Z)
Rev 0
Dec. 1998
Features
Can be used for protection of signal-bus lines.
The mounting efficiency has been improved by incorporating two low-loss diode element into a
CMPAK-4 package.
Ordering Information
Type No.
HSB0104YP
Laser Mark
E4
Package Code
CMPAK-4
Outline
43
12
(Top View)
1 Anode
2 Anode
3 Cathode
4 Cathode



HSB0104YP
HSB0104YP
Absolute Maximum Ratings (Ta = 25°C) *1
Item
Symbol
Repetitive peak reverse VRRM
voltage
Average rectified current
Non-Repetitive peak
forward surge current
Io
I *2
FSM
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Per one device
Note: 2. 10msec sine wave 1 pulse
Value
40
100
3
125
-55 to +125
Unit
V
mA
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Symbol Min Typ Max Unit Test Condition
VF
— — 0.58 V
IF = 100 mA
IR — — 50 µA VR = 40V
C — 20 — pF VR = 0V, 1=1MHz
2





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