Voltage Switching. HSB83YP Datasheet

HSB83YP Switching. Datasheet pdf. Equivalent

Part HSB83YP
Description Silicon Epitaxial Planar Diode for High Voltage Switching
Feature HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-843(Z) Rev 0 Mar 2000 Fea.
Manufacture Hitachi Semiconductor
Datasheet
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HSB83YP
HSB83YP
Silicon Epitaxial Planar Diode for High Voltage Switching
Features
High reverse voltage. (VR=250V)
CMPAK- 4 package which has two devices parallel connection,
is suitable for high density surface mounting.
ADE-208-843(Z)
Rev 0
Mar 2000
Ordering Information
Type No.
HSB83YP
Laser Mark
F7
Package Code
CMPAK-4
Outline
43
12
(Top View)
1 Anode
2 Anode
3 Cathode
4 Cathode



HSB83YP
HSB83YP
Absolute Maximum Ratings (Ta = 25°C) *2
Item
Symbol
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak
forward surge current
VRM
VR
I FM
I *1
FSM
Average rectified current IO
Junction temperature
Tj
Storage temperature
Tstg
Note 1. Value at duration of 10msec.
Note 2. Two device total.
Value
300
250
300
2
100
125
-55Å`+125
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics (Ta = 25°C) *1
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Reverse recovery
time
VF
I R1
I R2
C
t rr
− − 1.2 V IF = 100 mA
− − 0.2 µA VR = 250V
− − 100
VR = 300V
− − 3.0 pF VR = 0V, f = 1 MHz
− − 100 ns IF = IR =30 mA, Irr = 3mA, RL= 100
Note 1. Per one device.
2





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