PLANAR TRANSISTOR. HSC2682 Datasheet

HSC2682 TRANSISTOR. Datasheet pdf. Equivalent

Part HSC2682
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6626 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC2682 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PL HSC2682 Datasheet
Recommendation Recommendation Datasheet HSC2682 Datasheet





HSC2682
HI-SINCERITY
MICROELECTRONICS CORP.
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6626
Issued Date : 1994.12.07
Revised Date : 2006.02.20
Page No. : 1/4
Description
Audio frequency power amplifier, high frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-126ML
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W
Total Power Dissipation (TC=25°C) ...................................................................................................................... 8 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 180 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
180 -
-
180 -
-
5- -
- -1
- -1
- 120 500
- 0.8 1.5
90 -
-
100 200 320
- 200 -
- -5
Unit
V
V
V
uA
uA
mV
V
MHz
pF
Classification Of hFE2
Rank
Range
O
100-200
Y
160-320
Test Conditions
IC=1mA
IC=10mA
IE=10uA
VCB=180V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=20mA, VCE=10V
VCB=10V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC2682
HSMC Product Specification



HSC2682
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6626
Issued Date : 1994.12.07
Revised Date : 2006.02.20
Page No. : 2/4
Current Gain & Collector Current
1000
100 VCE=5V
10
Saturation Voltage & Collector Current
1
VBE(sat) @ IC=10IB
0.1
VCE(sat) @ IC=10IB
1
0.01
0.1 1
10
Collector Current (mA)
100
Capacitance & Reverse-Biased Voltage
10
0.01
0.01
0.1
1 10 100
Collector Current (mA)
1000 10000
Cutoff Freuency & Collector Current
1000
100 VCE=10 V
Cob 10
1
0.1
10000
1000
100
10
1
1
HSC2682
1 10
Reverse-Biased Voltage (V)
Safe Operating Area
100
PT=1 ms
PT=100 ms
PT=1 s
10 100
Forward Voltage (V)
1000
1
1 10 100
Collector Current (mA)
HSMC Product Specification





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