PLANAR TRANSISTOR. HSC3417 Datasheet

HSC3417 TRANSISTOR. Datasheet pdf. Equivalent

Part HSC3417
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC3417 NPN Epitaxial Planar Transistor Spec. No. : HE6618 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC3417 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSC3417 NPN Epitaxial Pl HSC3417 Datasheet
Recommendation Recommendation Datasheet HSC3417 Datasheet





HSC3417
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3417
NPN Epitaxial Planar Transistor
Spec. No. : HE6618
Issued Date : 1994.05.12
Revised Date : 2006.07.27
Page No. : 1/4
Features
High Definition CRT Display Video Output Applications
High Breakdown Voltage: BVCEO=300V
TO-126ML
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -50 ~ +150 °C
Junction Temperature ..................................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ..................................................................................................................................... 1.2 W
Total Power Dissipation (TC=25°C) ........................................................................................................................................ 7 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.......................................................................................................................................... 300 V
BVCEO Collector to Emitter Voltage ...................................................................................................................................... 300 V
BVEBO Emitter to Base Voltage................................................................................................................................................. 5 V
IC Collector Current........................................................................................................................................................... 100 mA
Electrical Characteristics (TA=25°C)
Symbol
Min. Typ. Max.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
300 -
-
300 -
-
5- -
- - 100
- - 100
- - 600
- -1
100 - 200
- 70 -
- 2.6 -
Classification Of hFE
Rank
E
Range
100-200
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=4V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=10mA, VCE=10V
IC=10mA ,VCE=30V, f=100MHz
VCB=30V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC3417
HSMC Product Specification



HSC3417
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6618
Issued Date : 1994.05.12
Revised Date : 2006.07.27
Page No. : 2/4
Current Gain & Collector Current
1000
100000
Saturation Voltage & Collector Current
100
VCE=10 V
10
1
0.1
1 10 100
Collector Current (mA)
1000
10000
1000
100
10
0.1
VBE(sat) @ IC=10IB
VCE(sat) @ IC=10IB
1 10 100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
100
Cutoff Frequency & Collector Current
1000
10
1
0.1
1000
100
Cob
1 10 100
Reverse Biased Voltage (V)
1000
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
100
10
1
10
1
1
HSC3417
10 100
Forward Biased Voltage-VCE (V)
1000
VCE=30 V
10
Collector Current (mA)
100
HSMC Product Specification





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