PLANAR TRANSISTOR. HSC3953S Datasheet

HSC3953S TRANSISTOR. Datasheet pdf. Equivalent

Part HSC3953S
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6502 Iss.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC3953S Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL P HSC3953S Datasheet
Recommendation Recommendation Datasheet HSC3953S Datasheet





HSC3953S
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2005.02.15
Page No. : 1/4
Description
High-definition CRT display video output, wide-band amplifier applications.
Features
High fT: 500MHz
High breakdown voltage: VCEO=120V min
Small reverse transfer capacitance
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ......................................................................................................................... 120 V
VCEO Collector to Emitter Voltage ...................................................................................................................... 120 V
VEBO Emitter to Base Voltage ................................................................................................................................ 3 V
IC Collector Current ....................................................................................................................................... 200 mA
ICP Peak Collector Current ............................................................................................................................ 400 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
120
120
3
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
160
-
400
2.1
Max.
-
-
-
0.1
0.1
1
1
320
-
-
-
Classification of hFE1
Rank
Range
D
60-120
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VEB=2V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA,
IE=0, VCB=30V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
E
100-200
F
160-320
HSC3953S
HSMC Product Specification



HSC3953S
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2005.02.15
Page No. : 2/4
Current Gain & Collector Current
1000
Saturation Voltage & Collector Current
1000
VCE=10V
100
100
VCE(sat) @ IC=10IB
10
10
0.1
1 10 100
Collector Current (mA)
1000
Saturation Voltage & Collector Current
1000
VBE(sat) @ IC=10IB
1
0.1
1 10 100
Collector Current (mA)
1000
Output Capacitance & Reverse-Biased Voltage
10
Cob
100
0.1
1 10 100
Collector Current (mA)
1000
1000
100
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1
HSC3953S
10 100
Forward Voltage (V)
1000
1
0.1 1
10 100
Reverse-Biased Voltage (V)
1000
900
800
700
600
500
400
300
200
100
0
0
Power Derating
20 40 60 80 100 120 140 160
Ambient Temperature-Ta(oC)
HSMC Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)