PLANAR TRANSISTOR. HSD1609 Datasheet

HSD1609 TRANSISTOR. Datasheet pdf. Equivalent

Part HSD1609
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6606 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD1609 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PL HSD1609 Datasheet
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6515 Issu HSD1609S Datasheet
Recommendation Recommendation Datasheet HSD1609 Datasheet





HSD1609
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2006.02.20
Page No. : 1/4
Features
Low frequency high voltage amplifier
Complementary pair with HSB1109
Absolute Maximum Ratings (TA=25°C)
TO-126ML
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 160 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 160 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
160 -
-
160 -
-
5- -
- - 10
- -2
- - 1.5
60 - 320
30 -
-
145 -
-
- 3.8 -
Classification Of hFE1
Rank
Range
B
60-120
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=140V
IC=30mA, IB=3mA
IC=10mA, VCE=5V
IC=10mA, VCE=5V
IC=1mA, VCE=5V
IC=10mA , VCE=5V
VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
C
100-200
D
160-320
HSD1609
HSMC Product Specification



HSD1609
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2006.02.20
Page No. : 2/4
10000
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
100
125oC
25oC
75oC
10
1
0.1
hFE @ VCE=5V
1 10 100
Collector Current IC (mA)
1000
100
10
0.1
125oC
75oC
25oC
VCE(sat) @ IC=10IB
1 10 100
Collector Current IC (mA)
1000
10000
Saturation Voltage & Collector Current
1000
100
10
0.1
125oC
25oC
75oC
VCE(sat) @ IC=20IB
1 10 100 1000
Collector Current IC (mA)
10000
Cutoff Frequency & Collector Current
1000
ON Voltage & Collector Current
1000
25oC
125oC
75oC
100
0.1
VBE(ON) @ IC=5V
1 10 100
Collector Current IC (mA)
1000
Capacitance & Reverse-Biased Voltage
10
100
VCE=5V
Cob
10
1
HSD1609
10 100
Collector Current (mA)
1000
1
0.1 1 10 100 1000
Reverse Biased Voltage (V)
HSMC Product Specification





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