PLANAR TRANSISTOR. HSD313 Datasheet

HSD313 TRANSISTOR. Datasheet pdf. Equivalent

Part HSD313
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD313 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6728 Issue.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD313 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD313 NPN EPITAXIAL PLA HSD313 Datasheet
Recommendation Recommendation Datasheet HSD313 Datasheet





HSD313
HI-SINCERITY
MICROELECTRONICS CORP.
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 1/5
Description
The HSD313 is designed for use in general purpose amplifier and switching
applications.
Absolute Maximum Ratings (TA=25°C)
TO-220
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 2 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage......................................................................................................................... 60 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 60 V
BVEBO Emitter to Base Voltage .............................................................................................................................. 5 V
IC Collector Current ................................................................................................................................................ 3 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min. Typ. Max.
60 -
-
60 -
-
5- -
- - 0.1
- -5
- -1
- -1
- - 1.5
40 - 320
40 -
-
-8-
Unit
V
V
V
mA
mA
mA
V
V
MHz
Classification Of hFE1
Rank
hFE
C
40-80
D
60-120
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=20V, IE=0
VCE=60V, IB=0
VEB=4V, IC=0
IC=2A, IB=0.2A
IC=1A, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=2V
VCE=5V, IC=0.5A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
E
100-200
F
160-320
HSD313
HSMC Product Specification



HSD313
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 2/5
Current Gain & Collector Current
1000
125oC
25oC
75oC
100
Current Gain & Collector Current
1000
125oC
25oC
75oC
100
hFE @ VCE=2V
hFE @ VCE=4V
10
1
10 100 1000
Collector Current-IC (mA)
10000
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
100
10
1
75oC
25oC
125oC
10 100 1000
Collector Current-IC (mA)
10000
10000
ON Voltage & Collector Current
VBE(ON) @ VCE=2V
1000
25oC
75oC
100
1
125oC
10 100 1000
Collector Current-IC (mA)
10000
HSD313
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=50IB
1000
75oC
100
125oC
25oC
10
1
10 100 1000
Collector Current-IC (mA)
10000
10.00
Switching Time & Collector Current
VCC=30V, IC=10IB1= -10IB2
1.00
Tstg
Ton
Tf
0.10
0.01
0.1
1.0
Collector Current (A)
10.0
HSMC Product Specification





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