PLANAR TRANSISTOR. HSD468 Datasheet

HSD468 TRANSISTOR. Datasheet pdf. Equivalent

Part HSD468
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD468 NPN Epitaxial Planar Transistor Spec. No. : HE6535 Issue.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
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HI-SINCERITY MICROELECTRONICS CORP. HSD468 NPN Epitaxial Pla HSD468 Datasheet
Recommendation Recommendation Datasheet HSD468 Datasheet





HSD468
HI-SINCERITY
MICROELECTRONICS CORP.
HSD468
NPN Epitaxial Planar Transistor
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 1/5
Description
The HSD468 is designed for general purpose low frequency power amplifier applications.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150 °C
Junction Temperature ........................................................................................................................................ 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) .................................................................................................................................. 900 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .............................................................................................................................................. 25 V
VCEO Collector to Emitter Voltage........................................................................................................................................... 20 V
VEBO Emitter to Base Voltage ................................................................................................................................................... 5 V
IC Collector Current ................................................................................................................................................................. 1 A
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max.
BVCBO
25
-
-
BVCEO
20
-
-
BVEBO
5
-
-
ICBO - - 1
*VCE(sat)
-
- 500
VBE(on)
-
-
1
*hFE 120 - 240
fT - 190 -
Cob - 22 -
Classification of hFE
Rank
C
Range
120-240
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=0.8A, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD468
HSMC Product Specification



HSD468
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 2/5
Current Gain & Collector Current
1000
125oC
75oC
100
25oC
10
1
hFE @ VCE=2V
10 100
Collector Current-IC (mA)
1000
1000.0
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
100.0
10.0
0.1
125oC
25oC
75oC
1 10 100
Collector Current-IC (mA)
1000
ON Voltage & Collector Current
1000
75oC
125oC
25oC
100
0.1
VBE(ON) @ VCE=2V
1 10 100
Collector Current-IC (mA)
1000
Capacitance & Reverse-Biased Voltage
100
10 Cob
1
0.1
HSD468
1 10 100
Reverse Biased Voltage (V)
1000
Cutoff Frequency & Ic
1000
VCE=2V
100
10
1
10 100
Collector Current (mA)
1000
10000
1000
100
Safe Operating Area
PT=1ms
PT=100m s
PT=1s
10
1
1 10 100
Forward Voltage-Vce (V)
HSMC Product Specification





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