System Protection. HSM107S Datasheet

HSM107S Protection. Datasheet pdf. Equivalent

Part HSM107S
Description Silicon Schottky Barrier Diode for System Protection
Feature HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev 6 Sep. 1998 Featur.
Manufacture Hitachi Semiconductor
Datasheet
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HSM107S Silicon Schottky Barrier Diode for System Protection HSM107S Datasheet
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HSM107S
HSM107S
Silicon Schottky Barrier Diode for System Protection
ADE-208-058F(Z)
Rev 6
Sep. 1998
Features
Low VF and high efficiency.
HSM107S which is interconnected in series configuration is designed for protection from not only
external excessive voltage but also miss-operation on electric systems.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM107S
Laser Mark
C5
Package Code
MPAK
Outline
3
21
(Top View)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2



HSM107S
HSM107S
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Reverse voltage
Peak forward current
Non-Repetitive Peak
forward surge current
VR
I FM
I *1
FSM
Average forward current IO
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Square wave, 10ms
Value
8
0.1
0.5
50
125
–55 to +125
Unit
V
A
A
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Reverse voltage
Reverse current
Forward voltage
ESD Capability *1
VR
IR
VF
8—
——
——
100 —
30
0.3
Notes: 1. Failure Criterion ; IR 60µA at VR=5V
Unit
µA
V
V
Test Condition
IR = 1.0 mA
VR = 5 V
IF = 10 mA
C=200pF, Both forward
and reverse direction 1 pulse
2





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