Balanced Mixer. HSM88ASR Datasheet

HSM88ASR Mixer. Datasheet pdf. Equivalent

Part HSM88ASR
Description Silicon Schottky Barrier Diode for Balanced Mixer
Feature HSM88ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-047D (Z) Rev 4 Jul 1998 Features.
Manufacture Hitachi Semiconductor
Datasheet
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HSM88ASR Silicon Schottky Barrier Diode for Balanced Mixer HSM88ASR Datasheet
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HSM88ASR
HSM88ASR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-047D (Z)
Rev 4
Jul 1998
Features
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM88ASR
Laser Mark
C3
Package Code
MPAK
Outline
3
21
(Top View)
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2



HSM88ASR
HSM88ASR
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Reverse voltage
Average rectified current
Junction temperature
VR
IO
Tj
Storage temperature
Tstg
Value
10
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Capacitance deviation
Forward voltage deviation
ESD-Capability*1
VF1
VF2
I R1
I R2
C
C
VF
Å\
350 —
500 —
——
——
——
——
——
30 —
420 mV
580
0.2 µA
10
0.85 pF
0.10 pF
10 mV
—V
IF = 1 mA
IF = 10 mA
VR = 2V
VR = 10V
VR = 0V, f = 1 MHz
VR = 0V, f = 1 MHz
IF = 10 mA
C=200pF , Both forward and reverse
direction 1 pulse.
Notes 1. Failure criterion ; IR 400nA at VR =2 V
2





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