PLANAR TRANSISTOR. HMJE13003D Datasheet

HMJE13003D TRANSISTOR. Datasheet pdf. Equivalent

Part HMJE13003D
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 20.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HMJE13003D Datasheet

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200207 Is HMJE13003D Datasheet
Recommendation Recommendation Datasheet HMJE13003D Datasheet





HMJE13003D
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200207
Issued Date : 1993.04.12
Revised Date : 2002.05.08
Page No. : 1/4
HMJE13003D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High Voltage, High Speed Power Switch
Switch Regulators
PWM Inverters and Motor Controls
Solenoid and Relay Drivers
Deflection Circuits
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current ............................................................................................. Continuous 0.75 A
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
700
400
-
-
-
-
-
-
-
8
5
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit Test Conditions
V IC=1mA, VBE(off)=1.5V
V IC=10mA
mA VEB=9V
mA VCE=700V, VBE(off)=1.5V
mV IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
V IC=1.5A, IB=0.5A
V IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
IC=0.5A, VCE=2V
IC=1A, VCE=2V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE13003D
HSMC Product Specification



HMJE13003D
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HD200207
Issued Date : 1993.04.12
Revised Date : 2002.05.08
Page No. : 2/4
Current Gain & Collector Current
100
125oC
25oC
10
75oC
hFE @ VCE=2V
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=3IB
75oC
100
125oC
25oC
1
0.1
1
10
100
1000
10000
Collector Current-IC (mA)
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=4IB
1000
100
75oC
125oC
25oC
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=5IB
1000
100
75oC
125oC
25oC
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VBE(sat) @ IC=4IB
1000
25oC
75oC
125oC
100
1
10 100 1000
Collector Current-IC (mA)
HMJE13003D
10000
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VBE(sat) @ IC=5IB
1000
100
1
25oC
125oC
75oC
10 100 1000
Collector Current-IC (mA)
10000
HSMC Product Specification





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