x 8-bit. HN58S256A Datasheet

HN58S256A 8-bit. Datasheet pdf. Equivalent


Part HN58S256A
Description 256 k EEPROM (32-kword x 8-bit)
Feature HN58S256A Series 256 k EEPROM (32-kword × 8-bit) ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description Th.
Manufacture Hitachi Semiconductor
Datasheet
Download HN58S256A Datasheet


HN58S256A Series 256 k EEPROM (32-kword × 8-bit) ADE-203-69 HN58S256A Datasheet
Recommendation Recommendation Datasheet HN58S256A Datasheet




HN58S256A
HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z)
Rev. 2.0
Nov. 1997
Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-
word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
technology. It also has a 64-byte page programming function to make the write operations faster.
Features
Single supply: 2.2 to 3.6 V
Access time: 150 ns (max)/200 ns (max)
Power dissipation:
Active: 10 mW/MHz, (typ)
Standby: 36 µW (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 15 ms (max)
Automatic page write (64 bytes): 15 ms (max)
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
105 erase/write cycles (in page mode)
10 years data retention
Software data protection
Industrial versions (Temperatur range:–40 to 85˚C) are also available.



HN58S256A
HN58S256A Series
Ordering Information
Type No.
HN58S256AT-15
HN58S256AT-20
Access time
150 ns
200 ns
Package
28-pin plastic TSOP (TFP-28DB)
Pin Arrangement
A2 15
A1 16
A0 17
I/O0 18
I/O1 19
I/O2 20
VSS 21
I/O3 22
I/O4 23
I/O5 24
I/O6 25
I/O7 26
CE 27
A10 28
HN58S256AT Series
(Top view)
14 A3
13 A4
12 A5
11 A6
10 A7
9 A12
8 A14
7 VCC
6 WE
5 A13
4 A8
3 A9
2 A11
1 OE
Pin Description
Pin name
A0 to A14
I/O0 to I/O7
OE
CE
WE
VCC
VSS
Function
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground







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