Power MOSFET. HP4936DY Datasheet

HP4936DY MOSFET. Datasheet pdf. Equivalent

Part HP4936DY
Description 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
Feature HP4936DY Data Sheet August 1999 File Number 4469.3 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Leve.
Manufacture Intersil Corporation
Datasheet
Download HP4936DY Datasheet

HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dua HP4936DY Datasheet
HP4936DY Data Sheet August 1999 File Number 4469.3 5.8A, 30 HP4936DY Datasheet
Recommendation Recommendation Datasheet HP4936DY Datasheet





HP4936DY
Data Sheet
HP4936DY
August 1999 File Number 4469.3
5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4936DY
SO-8
P4936DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.
Features
• Logic Level Gate Drive
• 5.8A, 30V
• rDS(ON) = 0.037at ID = 5.8A, VGS = 10V
• rDS(ON) = 0.055at ID = 4.7A, VGS = 4.5V
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
SO-8
8-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999



HP4936DY
HP4936DY
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (10µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
HP4936DY
30
30
±16
5.8
30
2
0.02
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TA = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA (Figure 9)
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TA = 55oC
VGS = ±16V
ID = 4.7A, VGS = 4.5V (Figures 6, 8)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
td(ON)
tr
td(OFF)
tf
Qg
Qgs
ID = 5.8A, VGS = 10V (Figures 6, 8)
VDD = 15V, ID 1A,
RL = 15, VGEN = 10V,
RGS = 6(Figures 12, 13)
VDS = 15V, VGS = 10V, ID 5.8A
(Figures 14, 15)
Gate to Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Qgd
CISS
COSS
CRSS
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 4)
Pulse Width <10s (Figure 11)
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 1.7A (Figure 7)
ISD = 1.7A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
30 - - V
1- -V
- - 1 µA
- - 25 µA
- - 100 nA
-
0.042 0.055
-
0.030 0.037
- 10 16 ns
- 10 16 ns
- 27 40 ns
- 24 35 ns
- 18 25 nC
- 4.5 - nC
- 2.5 - nC
- 625 -
pF
- 270 -
pF
- 50 - pF
-
-
62.5
oC/W
MIN TYP MAX UNITS
-
0.8 1.2
V
- 45 80 ns
8-9





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)