AM29LV640MU Memory with Datasheet

AM29LV640MU Datasheet, PDF, Equivalent


Part Number

AM29LV640MU

Description

64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with

Manufacture

Advanced Micro Devices

Total Page 30 Pages
Datasheet
Download AM29LV640MU Datasheet


AM29LV640MU
Am29LV640MU
Data Sheet
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AM29LV640MU
ADVANCE INFORMATION
Am29LV640MU
64 Megabit (4 M x 16-Bit) MirrorBit
3.0 Volt-only Uniform Sector Flash Memory with
VersatileI/OControl
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/Ocontrol
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the VIO pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
SecSi(Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word page read buffer
— 16-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 63-ball Fine-Pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
— ACC (high voltage) input accelerates programming
time for higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.6/13/03
Publication# 25301 Rev: C Amendment/1
Issue Date: June 12, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.


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