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HM62V8512B Datasheet, Equivalent, x 8-bit.4 M SRAM (512-kword x 8-bit) 4 M SRAM (512-kword x 8-bit) |
| Part | HM62V8512B |
|---|---|
| Description | 4 M SRAM (512-kword x 8-bit) |
| Feature | HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z) Rev. 6. 0 Mar. 31, 2000 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0. 35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system. Features • Single 3. 0 V supply: 2. 7 V to 3. 6 V • Access time: 70/85 ns (max) • Power dissipation Active: 15 mW/MHz (typ. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part | HM62V8512B |
|---|---|
| Description | 4 M SRAM (512-kword x 8-bit) |
| Feature | HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z) Rev. 6. 0 Mar. 31, 2000 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0. 35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system. Features • Single 3. 0 V supply: 2. 7 V to 3. 6 V • Access time: 70/85 ns (max) • Power dissipation Active: 15 mW/MHz (typ. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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