PLANAR TRANSISTOR. HMBT2222A Datasheet

HMBT2222A TRANSISTOR. Datasheet pdf. Equivalent

HMBT2222A Datasheet
Recommendation HMBT2222A Datasheet
Part HMBT2222A
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HMBT2222A; HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2002.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HMBT2222A Datasheet




Hi-Sincerity Mocroelectronics HMBT2222A
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT2222A is designed for general purpose amplifier and
high-speed switching, medium-power switching applications.
Features
High frequency current gain
High Speed Switching
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 75 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
Unit Test Conditions
V
V
V
nA
nA
nA
mV
V
V
V
MHz
IC=10uA
IC=10mA
IC=10uA
VCB=60V
VCE=60V, VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMBT2222A
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT2222A
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
75oC
Current Gain & Collector Current
1000
125oC
75oC
25oC
100
25oC
100
hFE @ VCE=1V
10
0.1
1 10 100
Collector Current-IC (mA)
1000
hFE @ VCE=10V
10
0.1
1 10 100
Collector Current-IC (mA)
1000
1000
100
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
125oC
75oC
25oC
10000
1000
100
Saturation Voltage & Collector Current
VCE(sat) @ IC=38IB
125oC
75oC
25oC
10
0.1
1 10 100
Collector Current-IC (mA)
1000
10000
Saturation Voltage & Collector Current
VBE(sat) @ IC=10IB
1000
25oC
75oC
125oC
100
0.1
1 10 100
Collector Current-IC (mA)
HMBT2222A
1000
10
1
10 100
Collector Current-IC (mA)
1000
Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1 1 10 100
Reverse Biased Voltage (V)
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT2222A
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 3/4
Cutoff Frequency & IC
1000
VCE=20V
100
10
1
10 100
Collector Current (mA)
1000
250
200
150
100
50
0
0
PD-Ta
50 100 150
Ambient Temperature-Ta (oC)
200
HMBT2222A
HSMC Product Specification







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)