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PNP Transistor. HMBT4125 Datasheet |
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HI-SINCERITY
MICROELECTRONICS CORP.
HMBT4125
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 1/3
Description
The HMBT4125 is designed for general purpose switching and amplifier
applications.
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -65 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .......................................................................................................................... -30 V
VCEO Collector to Emitter Voltage ....................................................................................................................... -30 V
VEBO Emitter to Base Voltage ............................................................................................................................ -4.0 V
IC Collector Current ....................................................................................................................................... -200 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
-30 -
-
-30 -
-
-4 -
-
- - -50
- - -50
- - -0.4
- - -950
50 - 150
25 -
-
200 -
-
- - 4.5
Unit
V
V
V
nA
nA
V
mV
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VBE=-3V
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT4125
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 2/3
A
L
3
BS
12
VG
C
D HK
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
J
Marking:
ZD
Pb Free Mark
Pb-Free: " " (Note)
Normal: None
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 2.80 3.04
B 1.20 1.60
C 0.89 1.30
D 0.30 0.50
G 1.70 2.30
H 0.013 0.10
J 0.085 0.177
K 0.32 0.67
L 0.85 1.15
S 2.10 2.75
V 0.25 0.65
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT4125
HSMC Product Specification
|
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 3/3
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HMBT4125
HSMC Product Specification
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