PNP Transistor. HMBT4125 Datasheet

HMBT4125 Transistor. Datasheet pdf. Equivalent

HMBT4125 Datasheet
Recommendation HMBT4125 Datasheet
Part HMBT4125
Description PNP Transistor
Feature HMBT4125; HI-SINCERITY MICROELECTRONICS CORP. HMBT4125 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6844 Iss.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HMBT4125 Datasheet




Hi-Sincerity Mocroelectronics HMBT4125
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT4125
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 1/3
Description
The HMBT4125 is designed for general purpose switching and amplifier
applications.
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -65 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .......................................................................................................................... -30 V
VCEO Collector to Emitter Voltage ....................................................................................................................... -30 V
VEBO Emitter to Base Voltage ............................................................................................................................ -4.0 V
IC Collector Current ....................................................................................................................................... -200 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
-30 -
-
-30 -
-
-4 -
-
- - -50
- - -50
- - -0.4
- - -950
50 - 150
25 -
-
200 -
-
- - 4.5
Unit
V
V
V
nA
nA
V
mV
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VBE=-3V
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMBT4125
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT4125
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 2/3
A
L
3
BS
12
VG
C
D HK
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
J
Marking:
ZD
Pb Free Mark
Pb-Free: " " (Note)
Normal: None
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 2.80 3.04
B 1.20 1.60
C 0.89 1.30
D 0.30 0.50
G 1.70 2.30
H 0.013 0.10
J 0.085 0.177
K 0.32 0.67
L 0.85 1.15
S 2.10 2.75
V 0.25 0.65
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT4125
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT4125
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : HE6844
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 3/3
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HMBT4125
HSMC Product Specification







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