PNP Transistor. HMBT4403 Datasheet

HMBT4403 Transistor. Datasheet pdf. Equivalent

HMBT4403 Datasheet
Recommendation HMBT4403 Datasheet
Part HMBT4403
Description PNP Transistor
Feature HMBT4403; HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HMBT4403 Datasheet




Hi-Sincerity Mocroelectronics HMBT4403
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6818
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4403 is designed for general purpose applications
requiring high breakdown voltages.
Absolute Maximum Ratings
SOT-23
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -40 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-100uA
VCE=-35V, VBE=-0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMBT4403
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT4403
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6818
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 2/4
Current Gain & Collector Current
1000
Current Gain & Collector Current
1000
125oC
25oC
100 75oC
125oC
25oC
100 75oC
hFE @ VCE=1V
hFE @ VCE=2V
10
1
10 100
Collector Current-IC (mA)
1000
10
1
10 100
Collector Current-IC (mA)
1000
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
100
75oC
125oC
25oC
Saturation Voltage & Collector Current
1000
25oC
125oC
75oC
VBE(sat) @ IC=10IB
10
0.1
1 10 100
Collector Current-IC (mA)
1000
Capacitance & Reverse-Biased Voltage
100
100
0.1
1 10 100
Collector Current-IC (mA)
1000
Cutoff Frequency & Collector Current
1000
Cob
10
VCE=10V
100
1
0.1
HMBT4403
1 10
Reverse Biased Voltage (V)
100
10
1
10 100
Collector Current (mA)
1000
HSMC Product Specification



Hi-Sincerity Mocroelectronics HMBT4403
HI-SINCERITY
MICROELECTRONICS CORP.
Safe Operating Area
10
PT=1ms
1 PT=100ms
PT=1s
0.1
0.01
1
10
Forward Biased Voltage-VCE (V)
100
Spec. No. : HE6818
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 3/4
HMBT4403
HSMC Product Specification







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