Intelligent Power Devices (IPDs)
MIP501, MIP502
MIP501 , MIP502
Silicon MOS IC
s Features
q
MIP501
3.8±0.2 10.8±0.2
7.5±0.2
4.5±0.2
Unit : mm
High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in
16.0±1.0
90° 0.65±0.1 0.85±0.1
q q q
2.5±0.1
1.0±0.1 0.65±0.1 0.7±0.1
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