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LTE21009R

NXP

NPN microwave power transistor


Description
DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product speciļ¬cation Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product speciļ¬cation NPN microwave power transistor FEATURES Diffused emitter ballasting resistors Self-aligned process entirely ion implanted and gold sandwich metallization optimum t...



NXP

LTE21009R

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