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LTE21015R

NXP
Part Number LTE21015R
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 27, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of Ju...
Datasheet PDF File LTE21015R PDF File

LTE21015R
LTE21015R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell allows an easier design of circuits.
APPLICATIONS • Common emitter class-A line...


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