D1001UK Datasheet (data sheet) PDF





D1001UK Datasheet, GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

D1001UK   D1001UK  

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TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 17 5MHz SINGLE ENDED FEATURES • SIMPLIFI ED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss • SIMPLE BIAS CIRCUITS To l. 0.005 0.005 5° 0.005 0.005 0.005 0. 005 REF 0.001 0.005 0.005 0.010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3. 17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol. 0.13 0.13 5° 0.13 0.1 3 0.13 0.13 REF 0.02 0.13 0.13 0.25 DRA IN GATE Inches 0.975 0.725 45° 0.25 0. 125 DIA 0.225 0.375 0.260 0.005 0.170 0.1

D1001UK Datasheet, GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

D1001UK   D1001UK  
00 0.800 • LOW NOISE • HIGH GAIN 16 dB MINIMUM APPLICATIONS • HF/VH F/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipatio n Drain – Source Breakdown Voltage Ga te – Source Breakdown Voltage Drain C urrent Storage Temperature Maximum Oper ating Junction Temperature 50W 70V ±20 V 5A –65 to 150°C 200°C Semelab pl c. Telephone +44(0)1455 556565. Fax +4 4(0)1455 552612. e-mail sales@semelab.c o.uk Website http://www.semelab.co.uk 9/98 D1001UK ELECTRICAL CHARACTERISTI CS (Tcase = 25°C unless otherwise stat ed) Parameter Test Conditions Min. BVDS S IDSS IGSS gfs GPS η Ciss Coss Crss D rain–Source Breakdown Voltage Zero Ga te Voltage Drain Current Gate Leakage C urrent Forward Transconductance* Common Source Power Gain Drain Efficiency Inp ut Capacitance Output Capacitance Rever se Transfer Capacitance VGS = 0 VDS = 2 8V VGS = 20V ID = 10mA VDS = 10V PO = 2 0W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0. 1A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 16 50 20:1 70 Typ. Max . Unit V 1 1 7 mA µA V S dB % — 60 3 0 2.5 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs








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